MBRS2040LT3 |
RFQ for MBRS2040LT3 Required Field |
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| Technical/Catalog Information | MBRS2040LT3G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 430mV @ 2A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 800A @ 40V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRS2040LT3G MBRS2040LT3G MBRS2040LT3GOSDKR ND MBRS2040LT3GOSDKRND MBRS2040LT3GOSDKR |
| Product | Manufacturers | Pack | D/C |
| MBRS2040LT3 | - | SMB(DO-214AA) | 2009+ |
Features |
| • Compact Package with J−Bend Leads Ideal for Automated Handling• Highly Stable Oxide Passivated Junction• Guardring for Over−Voltage Protection• Low Forward Voltage Drop• Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish |
| Parameter | Symbol |
Value |
Unit |
| Repetitive peak reverse voltage | VRRM |
40 |
V |
| Working peak reverse voltage | VRWM |
40 |
V |
| DC blocking voltage | VR |
40 |
V |
| Average Rectified Forward Current (At Rated VR, TC = 103°C) |
IO | 2.0 | A |
| Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 104°C) |
IFRM | 4.0 |
A |
| Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM | 70 | A |
| Storage/Operating Case Temperature |
Tstg, TC | 55 to +150 | °C |
| Operating Junction Temperature | TJ | 55 to +125 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) |
dv/dt | 10,000 | V/s |
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